2n5551 smd datasheets

2n5551 smd datasheets

Dec 21, 2017 · The 2N5551 is an NPN amplifier Transistor with an amplification factor of 80 when the collector current is 10mA. It also has decent switching characteristics so can amplify low-level signals. 2N5551 Transistor Pinout, Features, Equivalent & Datasheet MARKING: J3Y MAXIMUM RATINGS (Ta=250C unless otherwise noted) Value 40 25 0.5 03 150 -55-150 Unit Symbol VCBO VCEO VEBO pc stg Collector-Base Voltage The 2N5401 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. 2N5401C (suffix "C") transistor with center collector. Here is an image showing the pin diagram of the this transistor. 2N5551 Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for 2N5551.

SMD Equivalent The SMD versions of the 2N5551 are available as the 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), KST43 (SOT-23), KST5551 (SOT-23), MMBT5551 (SOT-23) and PMBT5551 (SOT-23). 2N5551 datasheet, 2N5551 datasheets, 2N5551 pdf, 2N5551 circuit : SEMTECH - NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications??? ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N5551 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg-55~150 °C 2N5551 Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for 2N5551. Rev. A/AH 2009-01-12 MMBT5401 SMD High Voltage Transistor (PNP) www.taitroncomponents.com Page 2 of 3 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) ...

small signal pnp transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the npn complementary type is 2n3904 applications well suitable for tv and home appliance equipment small load switch transistor with 2N5551 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg-55~150 °C diodes, semiconductors, electronics, rectron, discrete, rectifiers, schottky, si. Company Profile. Rectron Limited was established in January 1976 in Tu-Cheng, Taipei by a team of experienced semiconductor engineers. UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R201-014.E UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

All Transistors Datasheet. Cross Reference Search. Transistor Database. October 2007 Rev 3 1/8 8 2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications Voltage regulation Relay driver 2N5551 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg-55~150 °C 2n5401 smd datasheet, cross reference, circuit and application notes in pdf format. ... SMD 2N5551, SMD Positive Voltage Regulator Positive Voltage Regulator , ...

2N5551 datasheet, 2N5551 pdf, 2N5551 data sheet, datasheet, data sheet, pdf MAXIMUM RATING @ Ta=25C unless othenMse specified Units mA mW Symbol VCBO CEO EBO pc Tj, T stg Parameter Collector-Base Voltage Collector-Emitter Voltage diodes, semiconductors, electronics, rectron, discrete, rectifiers, schottky, si. Company Profile. Rectron Limited was established in January 1976 in Tu-Cheng, Taipei by a team of experienced semiconductor engineers. small signal pnp transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the npn complementary type is 2n3904 applications well suitable for tv and home appliance equipment small load switch transistor with

Compare pricing for ON Semiconductor 2N5551 across 12 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart.

2N5551 MMBT5551. NPN General Purpose Amplifier. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Dec 21, 2017 · The 2N5551 is an NPN amplifier Transistor with an amplification factor of 80 when the collector current is 10mA. It also has decent switching characteristics so can amplify low-level signals. 2N5551 Transistor Pinout, Features, Equivalent & Datasheet April 2011 Doc ID 018729 Rev 1 1/10 10 2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC TO- 92 Plastic Package NPN Silicon Planar Epitaxial High Voltage Transistor Application High Voltage, General Purpose,Telephony Device Types 2N5551 160V, 600mA CMBT5551 SOT23 SMD 160V, 600mA See the data sheet for 2N5551 and for CMBT5551

2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN Ge neral Purpose Amplifier tm April 2006 2N5551- MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R201-014.E UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

2N5551 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg-55~150 °C MARKING: J3Y MAXIMUM RATINGS (Ta=250C unless otherwise noted) Value 40 25 0.5 03 150 -55-150 Unit Symbol VCBO VCEO VEBO pc stg Collector-Base Voltage

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical NPN high-voltage transistors 2N5550; 2N5551 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published.

Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... 2N5551 / MMBT5551 Rev. 1.1.0 1 June 2013 2N5551 / MMBT5551 NPN General-Purpose Amplifier Ordering Information(1) Note: 1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V) Part Number Top Mark Package Packing Method 2N5551TA ...

PBSS304NX : 60 V, 4.7 A NPN Low V NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX. NPN high-voltage transistors 2N5550; 2N5551 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage PN2222 PN2222A VCEO 30 40 Vdc Collector-Base Voltage PN2222 PN2222A VCBO 60 75 Vdc Emitter-Base Voltage PN2222 PN2222A VEBO 5.0 6.0 Vdc Collector Current – Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C ... Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical